发明申请
- 专利标题： Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same
- 专利标题（中）： 用于控制硅晶片表面形状的蚀刻液和使用其制造硅晶片的方法
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申请号： US11345009申请日： 2006-01-31
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公开(公告)号： US20060169667A1公开(公告)日： 2006-08-03
- 发明人: Sakae Koyata , Yuichi Kakizono , Tomohiro Hashii , Katsuhiko Murayama
- 申请人： Sakae Koyata , Yuichi Kakizono , Tomohiro Hashii , Katsuhiko Murayama
- 优先权： JP2005-022764 20050131
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; H01L21/461 ; C09K13/00 ; C23F1/00
摘要：
A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.