发明申请
- 专利标题: VERTICAL CARBON NANOTUBE TRANSISTOR INTEGRATION
- 专利标题(中): 垂直碳纳米管晶体管集成
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申请号: US10906016申请日: 2005-01-31
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公开(公告)号: US20060169972A1公开(公告)日: 2006-08-03
- 发明人: Toshiharu Furukawa , Mark Hakey , David Horak , Charles Koburger , Mark Masters , Peter Mitchell
- 申请人: Toshiharu Furukawa , Mark Hakey , David Horak , Charles Koburger , Mark Masters , Peter Mitchell
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
A hybrid semiconductor structure which includes a horizontal semiconductor device and a vertical carbon nanotube transistor, where the vertical carbon nanotube transistor and the horizontal semiconductor device have at least one shared node is provided. The at least one shared node can include, for example, a drain, source or gate electrode of a FET, or an emitter, collector, or base of a bipolar transistor. A method of forming the inventive hybrid semiconductor structure having at least one shared node between the vertical carbon nanotube transistor and the horizontal semiconductor device is also provided.
公开/授权文献
- US07535016B2 Vertical carbon nanotube transistor integration 公开/授权日:2009-05-19