发明申请
- 专利标题： Memory device and manufacturing method thereof
- 专利标题（中）： 存储器件及其制造方法
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申请号： US11337554申请日： 2006-01-24
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公开(公告)号： US20060175648A1公开(公告)日： 2006-08-10
- 发明人: Yoshinobu Asami
- 申请人： Yoshinobu Asami
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2005-024629 20050131
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/8244
摘要：
As for a memory element implemented in a semiconductor device typified by an RFID, it is an object of the present invention to reduce manufacturing steps and to provide a memory element and a memory circuit having the element with reduced cost. It is a feature of the present invention that a memory element sandwiched between electrodes has an organic compound, and an electrode connected to a semiconductor element controlling the memory element functions as an electrode of the memory element. In addition, an extremely thin semiconductor film formed on an insulated surface is used for the memory element; therefore cost can be reduced.
公开/授权文献
- US07768014B2 Memory device and manufacturing method thereof 公开/授权日：2010-08-03
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