发明申请
- 专利标题： FLASH MEMORY
- 专利标题（中）： 闪存
-
申请号： US11161994申请日： 2005-08-25
-
公开(公告)号： US20060175654A1公开(公告)日： 2006-08-10
- 发明人: Jui-Yu Pan , Cheng-Yuan Hsu , I-Chun Chuang , Chih-Wei Hung
- 申请人： Jui-Yu Pan , Cheng-Yuan Hsu , I-Chun Chuang , Chih-Wei Hung
- 优先权： TW94103556 20050204
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336
摘要：
A method for fabricating a flash memory is described. A mask layer having openings to expose a portion of the substrate is formed on the substrate. A tunneling dielectric layer is formed at the bottom surface of the openings. Conductive spacers are formed on the sidewalls of the openings. The conductive spacers are patterned to form a plurality of floating gates. A plurality of buried doped regions is formed in the substrate under the bottom surface of the openings. An inter-gate dielectric layer is formed over the substrate. A plurality of control gates is formed over the substrate to fill the openings. The mask layer is removed to form a plurality of memory units. A plurality of source regions and drain regions are formed in the substrate beside the memory units.
公开/授权文献
- US07196371B2 Flash memory 公开/授权日：2007-03-27
信息查询
IPC分类:
