A resistive memory element for reversibly switching between a high-resistance OFF state and a low-resistance ON state includes a reactive electrode, an inert electrode and a solid electrolyte arranged between the two electrodes. The resistive memory element further includes a nanomask structure arranged in the solid electrolyte, in particular at the inert electrode, where the nanomask structure is provided with openings through which the solid electrolyte makes contact with the inert electrode.