发明申请
US20060183048A1 Positive photoresist composition and resist pattern formation
审中-公开
正光致抗蚀剂组合物和抗蚀剂图案形成
- 专利标题： Positive photoresist composition and resist pattern formation
- 专利标题（中）： 正光致抗蚀剂组合物和抗蚀剂图案形成
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申请号： US10568126申请日： 2004-08-19
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公开(公告)号： US20060183048A1公开(公告)日： 2006-08-17
- 发明人: Yasuo Masuda , Toshiki Okui
- 申请人： Yasuo Masuda , Toshiki Okui
- 优先权： JP2003-325953 20030918
- 国际申请： PCT/JP04/12235 WO 20040819
- 主分类号： G03C5/18
- IPC分类号： G03C5/18
摘要：
A means for increasing development velocity of a positive photoresist composition is provided which contains a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group. This means is positive photoresist composition and a formation method of a resist pattern using the composition which contains (A) a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group, which is dissolved in (B) propylene glycol alkyl ether acetate.
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