发明申请
- 专利标题： Silane composition, silicon film forming method and solar cell production method
-
申请号： US11404921申请日： 2006-04-17
-
公开(公告)号： US20060185712A1公开(公告)日： 2006-08-24
- 发明人: Hiroshi Shiho , Hitoshi Kato
- 申请人： Hiroshi Shiho , Hitoshi Kato
- 申请人地址： JP Tokyo 104-0045
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Tokyo 104-0045
- 优先权： JP2001-245947 20010814; JP2001-319304 20011017; JP2001-375992 20011210
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L25/00
摘要：
A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.
公开/授权文献
信息查询
IPC分类:
