Provided is a copper bonding wire formed of a high purity copper of 99.999% or more including at least one of P and Nb within a range between 20 wt ppm and 100 wt ppm and at least one of Zr, Sn, Be, Nd, Sc, Ga, Fr, and Ra within a range between 1 wt ppm and 100 wt ppm. Here, a total content of the added elements is restricted within a range between 20 wt ppm and 200 wt ppm, and a residual amount of the copper bonding wire is a high purity copper of 99.98% or more. As a result, metal squeeze out and chip cratering can be reduced in a general semiconductor chip and a low dielectric semiconductor chip. Also, a short tail of the copper bonding wire occurring during bonding of the copper bonding wire to a lead finger can be reduced.