Disclosed herein is a circuit and method for generating a boost element drive signal in a semiconductor memory device with a mode register set signal. The boost element drive signal generation circuit includes a preliminary drive signal generation unit and a level shifter. The preliminary drive signal generation unit generates a preliminary drive signal in response to a group of mode setting signals. The mode setting signal group is provided from a mode register set. The level shifter generates the boost element drive signal in response to the preliminary drive signal. The pull-up voltage of the boost element drive signal is level-shifted relative to a pull-up voltage of the preliminary drive signal. According to the boost element drive signal generation circuit of the present invention, the activation instant of a boost element drive signal is controlled by a mode setting signal group. Therefore, the boost element drive signal is activated after a boost voltage is stabilized. Therefore, in a semiconductor memory device to which the boost element drive signal generation circuit of the present invention is applied, leakage current flowing through a normal inverter that has an input terminal for receiving the output signal of a boost inverter is greatly decreased.