- 专利标题： Printing of design features using alternating PSM technology with double mask exposure strategy
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申请号： US11253061申请日： 2005-10-18
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公开(公告)号： US20060188792A1公开(公告)日： 2006-08-24
- 发明人: Kyle Patterson , Yves Rody , Christophe Couderc , Corinne Miramond-Collet
- 申请人： Kyle Patterson , Yves Rody , Christophe Couderc , Corinne Miramond-Collet
- 申请人地址： US TX Austin FR Crolles
- 专利权人： Freescale Semiconductor Inc.,STMicroelectronics (Crolles 2) SAS
- 当前专利权人： Freescale Semiconductor Inc.,STMicroelectronics (Crolles 2) SAS
- 当前专利权人地址： US TX Austin FR Crolles
- 优先权： EP04292516.4 20041022
- 主分类号： G03C5/00
- IPC分类号： G03C5/00 ; G06F17/50 ; G03F1/00
摘要：
For cases where one edge of a design feature is to be printed through a shifter mask and another one is to be printed through a binary trim mask, and where no upsizing can be performed due to the local density of the design, it is proposed to add shifters with respect to the shifter mask in such a way that all the edges are printed by the phase shift mask.
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