发明申请
- 专利标题: Method of forming a composite layer, method of manufacturing a gate structure by using the method of forming the composite layer and method of manufacturing a capacitor by using the method of forming the composite layer
- 专利标题(中): 复合层的形成方法,通过使用复合层的形成方法制造栅极结构的方法以及使用形成复合层的方法制造电容器的方法
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申请号: US11356399申请日: 2006-02-16
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公开(公告)号: US20060189055A1公开(公告)日: 2006-08-24
- 发明人: Hong-Bae Park , Hag-Ju Cho , Yu-Gyun Shin , Sang-Bom Kang
- 申请人: Hong-Bae Park , Hag-Ju Cho , Yu-Gyun Shin , Sang-Bom Kang
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2005-0015224 20050224
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/336
摘要:
Methods of forming a composite layer, a gate structure and a capacitor are disclosed. In the methods, a first dielectric layer is atomic layer deposited on a substrate by using an oxidation gas and a first precursor gas that includes hafnium precursors. A second dielectric layer is then atomic layer deposited on the first dielectric layer by using a nitriding gas and a second precursor gas that includes hafnium precursors.