- 专利标题: Nonvolatile memory device and method of manufacturing the same
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申请号: US11354011申请日: 2006-02-15
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公开(公告)号: US20060193175A1公开(公告)日: 2006-08-31
- 发明人: Yoon-ho Khang , Eun-hye Lee , Myoung-jae Lee , Sun-ae Seo , Seung-Eon Ahn
- 申请人: Yoon-ho Khang , Eun-hye Lee , Myoung-jae Lee , Sun-ae Seo , Seung-Eon Ahn
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2005-0012915 20050216
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C16/04
摘要:
The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a transition metal oxide (TMO) on the tunneling oxide, a blocking oxide film formed on the floating gate, a gate electrode formed on the blocking oxide film.