发明申请
US20060194356A1 Method for manufacturing multi-wavelength semiconductor laser device
审中-公开
制造多波长半导体激光器件的方法
- 专利标题： Method for manufacturing multi-wavelength semiconductor laser device
- 专利标题（中）： 制造多波长半导体激光器件的方法
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申请号： US11238319申请日： 2005-09-29
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公开(公告)号： US20060194356A1公开(公告)日： 2006-08-31
- 发明人: Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
- 申请人： Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
- 申请人地址： KR Suwon
- 专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址： KR Suwon
- 优先权： KR10-2005-16521 20050228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
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