发明申请
- 专利标题: SEMICONDUCTOR DEVICE WITH MULTIPLE SEMICONDUCTOR LAYERS
- 专利标题(中): 具有多个半导体层的半导体器件
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申请号: US11382432申请日: 2006-05-09
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公开(公告)号: US20060194384A1公开(公告)日: 2006-08-31
- 发明人: Suresh Venkatesan , Mark Foisy , Michael Mendicino , Marius Orlowski
- 申请人: Suresh Venkatesan , Mark Foisy , Michael Mendicino , Marius Orlowski
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A semiconductor device structure uses two semiconductor layers to separately optimize N and P channel transistor carrier mobility. The conduction characteristic for determining this is a combination of material type of the semiconductor, crystal plane, orientation, and strain. Hole mobility is improved in P channel transistors when the conduction characteristic is characterized by the semiconductor material being silicon germanium, the strain being compressive, the crystal plane being (100), and the orientation being . In the alternative, the crystal plane can be (111) and the orientation in such case is unimportant. The preferred substrate for N-type conduction is different from the preferred (or optimum) substrate for P-type conduction. The N channel transistors preferably have tensile strain, silicon semiconductor material, and a (100) plane. With the separate semiconductor layers, both the N and P channel transistors can be optimized for carrier mobility.