发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11355177申请日： 2006-02-16
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公开(公告)号： US20060194390A1公开(公告)日： 2006-08-31
- 发明人: Yutaka Imai , Yoshiyuki Ishigaki
- 申请人： Yutaka Imai , Yoshiyuki Ishigaki
- 优先权： JP2005-039429 20050216
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/44 ; H01L23/48
摘要：
A semiconductor device includes an interlayer insulation film including an air gap between portions of adjacent wiring layers or isolation pattern layers or both that are distanced from each other by thinning a layered structure of each of the wiring layers or the isolation pattern layers or both selectively from a top layer to a substrate so that the portions of the wiring layers or the isolation pattern layers or both are distanced from each other.
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