发明申请
US20060194441A1 Method for etching a silicon wafer and method for performing differentiation between the obverse and the reverse of a silicon wafer using the same method
审中-公开
用于蚀刻硅晶片的方法和使用相同方法在硅晶片的正面和反向之间进行微分的方法
- 专利标题： Method for etching a silicon wafer and method for performing differentiation between the obverse and the reverse of a silicon wafer using the same method
- 专利标题（中）： 用于蚀刻硅晶片的方法和使用相同方法在硅晶片的正面和反向之间进行微分的方法
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申请号： US11067117申请日： 2005-02-25
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公开(公告)号： US20060194441A1公开(公告)日： 2006-08-31
- 发明人: Sakae Koyata , Kazushige Takaishi , Masashi Norimoto
- 申请人： Sakae Koyata , Kazushige Takaishi , Masashi Norimoto
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; B44C1/22 ; C23F1/00
摘要：
The invention is improvement of a silicon wafer etching method of storing an acid etching solution and an alkali etching solution respectively in plural etching tanks, and immersing a silicon wafer having a work-degenerated layer, which has experienced a lapping process and then a cleaning process, in the acid etching solution and the alkali etching solution in order. Its characteristic configuration is in that an alkali etching process is performed after an acid etching process, the etching removal depth for acid etching is made to be equal to or larger than the etching removal depth for alkali etching, and the etching rate of acid etching is made to be 0.0075 μm/sec to 0.05 μm/sec in total of the obverse and the reverse of the silicon wafer.