发明申请
- 专利标题： Magnetic memory device
- 专利标题（中）： 磁存储器件
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申请号： US11133383申请日： 2005-05-20
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公开(公告)号： US20060198224A1公开(公告)日： 2006-09-07
- 发明人: Yoshihiro Ueda , Yoshihisa Iwata
- 申请人： Yoshihiro Ueda , Yoshihisa Iwata
- 优先权： JP2005-059261 20050303
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
A magnetic memory device includes a plurality of variable resistance elements arranged in parallel between a first and second nodes and having resistance values which vary depending on data stored in the elements, a selection transistor connected to the first node to perform selection on the plurality of variable resistance elements, and a bit line connected to the second node. A plurality of current paths including the variable resistance elements between the first and second nodes have different resistance values.
公开/授权文献
- US07142447B2 Nonvolatile memory device with variable resistance element 公开/授权日：2006-11-28
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