发明申请
- 专利标题： METHOD FOR FABRICATING ULTRA-HIGH TENSILE-STRESSED FILM AND STRAINED-SILICON TRANSISTORS THEREOF
- 专利标题（中）： 制造超高压应力薄膜及其应变硅晶体管的方法
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申请号： US11164488申请日： 2005-11-24
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公开(公告)号： US20060199305A1公开(公告)日： 2006-09-07
- 发明人: Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
- 申请人： Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Tsai-Fu Chen , Wen-Han Hung
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/31
摘要：
A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.
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