发明申请
- 专利标题： Semiconductor integrated circuit and semiconductor device
- 专利标题（中）： 半导体集成电路和半导体器件
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申请号： US11366552申请日： 2006-03-03
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公开(公告)号： US20060199310A1公开(公告)日： 2006-09-07
- 发明人: Yukio Nakabayashi , Junji Koga
- 申请人： Yukio Nakabayashi , Junji Koga
- 优先权： JPP2005-60843 20050304
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L23/02
摘要：
A semiconductor integrated circuit includes a substrate having a main surface to which a first stress is applied; a first channel conductive field effect transistor placed in a first region of the main surface of the substrate, the carrier mobility of a channel of the first channel conductive field effect transistor being improved by the first stress; and a second channel conductive field effect transistor placed in a second region of the main surface of the substrate, and receiving a second stress at a channel thereof, the second stress being opposite to the first stress, the carrier mobility of the channel of the second channel conductive field effect transistor being improved by the second stress, and the second region being independent from the first region.
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