发明申请
US20060202315A1 Microelectronic devices having conductive complementary structures and methods of manufacturing microelectronic devices have conductive complementary structures 审中-公开
具有导电互补结构的微电子器件和制造微电子器件的方法具有导电互补结构

  • 专利标题: Microelectronic devices having conductive complementary structures and methods of manufacturing microelectronic devices have conductive complementary structures
  • 专利标题(中): 具有导电互补结构的微电子器件和制造微电子器件的方法具有导电互补结构
  • 申请号: US11418362
    申请日: 2006-05-04
  • 公开(公告)号: US20060202315A1
    公开(公告)日: 2006-09-14
  • 发明人: Peter BensonWilliam Hiatt
  • 申请人: Peter BensonWilliam Hiatt
  • 申请人地址: US ID Boise
  • 专利权人: Micron Technology, Inc.
  • 当前专利权人: Micron Technology, Inc.
  • 当前专利权人地址: US ID Boise
  • 主分类号: H01L23/02
  • IPC分类号: H01L23/02
Microelectronic devices having conductive complementary structures and methods of manufacturing microelectronic devices have conductive complementary structures
摘要:
Microelectronic devices, microfeature workpieces, and methods of forming and stacking the microelectronic devices and the microfeature workpieces. In one embodiment, a microfeature workpiece includes a plurality of first microelectronic dies. The individual first dies have an integrated circuit, a plurality of pads electrically coupled to the integrated circuit, and a plurality of first conductive mating structures at least proximate to corresponding pads. The first conductive mating structures project away from the first dies and are configured to interconnect with corresponding complementary second conductive mating structures on second dies which are to be mounted to corresponding first dies.
信息查询
0/0