- 专利标题： Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device
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申请号： US11431000申请日： 2006-05-10
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公开(公告)号： US20060202356A1公开(公告)日： 2006-09-14
- 发明人: Hideo Nakagawa , Masaru Sasago
- 申请人： Hideo Nakagawa , Masaru Sasago
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2002-137893 20020514
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.
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