发明申请
US20060203600A1 Low power word line control circuits with boosted voltage output for semiconductor memory
有权
具有升压电压输出的半导体存储器的低功率字线控制电路
- 专利标题： Low power word line control circuits with boosted voltage output for semiconductor memory
- 专利标题（中）： 具有升压电压输出的半导体存储器的低功率字线控制电路
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申请号： US11264041申请日： 2005-10-31
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公开(公告)号： US20060203600A1公开(公告)日： 2006-09-14
- 发明人: Chung-Cheng Chou , Chien-Hua Huang , Hau-Tai Shieh , Tsai-Hsin Lai
- 申请人： Chung-Cheng Chou , Chien-Hua Huang , Hau-Tai Shieh , Tsai-Hsin Lai
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A word line control device has a word line driver for deactivating and activating a word line to control access to a memory cell, and a voltage coupling device for coupling voltages to the word line driver.
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