发明申请
- 专利标题： METHOD OF DETERMINING N-WELL SCATTERING EFFECTS ON FETS
- 专利标题（中）： 确定FET的N阱散射效应的方法
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申请号： US10906826申请日： 2005-03-08
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公开(公告)号： US20060205098A1公开(公告)日： 2006-09-14
- 发明人: Micah Galland , Terence Hook
- 申请人： Micah Galland , Terence Hook
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A process is provided for determining the effects of scattering from the edge of a resist during a doping process. Edges of a resist which has been patterned to create an n-well are simulated and individually stepped across a predetermined region in predetermined step sizes. The step sizes may vary from step to step after each step, the scattering effects due to the resist edge at its particular location is determined. A resist of virtually any shape may be divided into its component edges and each edge may be individually stepped during the process.
公开/授权文献
- US07824933B2 Method of determining n-well scattering effects on FETs 公开/授权日：2010-11-02