- 专利标题: Fusing nanowires using in situ crystal growth
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申请号: US11077830申请日: 2005-03-11
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公开(公告)号: US20060205240A1公开(公告)日: 2006-09-14
- 发明人: Alfred Pan , Yoocharn Jeon , Hou Ng , Scott Haubrich
- 申请人: Alfred Pan , Yoocharn Jeon , Hou Ng , Scott Haubrich
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.
公开/授权文献
- US07218004B2 Fusing nanowires using in situ crystal growth 公开/授权日:2007-05-15
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