发明申请
- 专利标题: Substrate holding mechanism, substrate polishing apparatus and substrate polishing method
- 专利标题(中): 基板保持机构,基板研磨装置和基板研磨方法
-
申请号: US10539245申请日: 2003-12-26
-
公开(公告)号: US20060205323A1公开(公告)日: 2006-09-14
- 发明人: Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
- 申请人: Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
- 优先权: JP2002-380583 20021227; JP2003-188775 20030630
- 国际申请: PCT/JP03/17032 WO 20031226
- 主分类号: B24B51/00
- IPC分类号: B24B51/00 ; B24B29/00 ; B24B47/02
摘要:
A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing the amount of heat generated during polishing of a substrate to be polished and of effectively cooling the substrate holding part of the substrate holding mechanism and also capable of effectively preventing the polishing solution and polishing dust from adhering to the outer peripheral portion of the substrate holding part and drying out thereon. The substrate holding mechanism (top ring 1) has a mounting flange 2, a support member 6, and a retainer ring 3. A substrate W to be polished is held on the lower side of the support member 6 surrounded by the retainer ring 3, and the substrate W is pressed against a polishing surface. The mounting flange 2 is provided with a flow passage 26 contiguous with at least the retainer ring 3. A temperature-controlled gas supplied through the flow passage 26 to cool the mounting flange 2, the support member 6 and the retainer ring 3. The retainer ring 3 is provided with a plurality of through-holes 3a communicating with the flow passage 26 to spray the gas flowing through the flow passage 26 onto the polishing surface of a polishing table.
公开/授权文献
信息查询