A solid-state image sensing device comprising: a silicon substrate; a photoelectric conversion layer provided for absorbing a green light component to generate optical charge; and photodiodes provided in a shallow portion and in a deep portion respectively in a depth direction of the silicon substrate, wherein the solid-state image sensing device further comprises a trimming layer provided between the photoelectric conversion layer and the silicon substrate for adjusting intensity of each of respective color light components of the light which is transmitted through the photoelectric conversion layer so as to be made incident on the photodiodes.