发明申请
- 专利标题: ESD protection circuit for low voltages
- 专利标题(中): 低电压ESD保护电路
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申请号: US11376138申请日: 2006-03-16
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公开(公告)号: US20060209479A1公开(公告)日: 2006-09-21
- 发明人: Peter Grombach , Manfred Klaussner
- 申请人: Peter Grombach , Manfred Klaussner
- 专利权人: ATMEL GERMANY GMBH
- 当前专利权人: ATMEL GERMANY GMBH
- 优先权: DE102005013687.7 20050318
- 主分类号: H02H9/00
- IPC分类号: H02H9/00
摘要:
An ESD protection circuit is provided having a first field-effect transistor, which has a first drain terminal, a first source terminal and a first control terminal, and having an input network which, in the event that a first voltage present between the first drain terminal and the first source terminal crosses a threshold value, alters a second voltage that appears between the first control terminal and the first source terminal. The input network contains a second field-effect transistor, complementary to the first field-effect transistor, having a second drain terminal, a second source terminal and a second control terminal, wherein the first drain terminal is connected to the second source terminal and, through a first resistance, to the second control terminal, and the second drain terminal is connected to the first control terminal and, through a second resistance, to the first source terminal.
公开/授权文献
- US08233252B2 ESD protection circuit for low voltages 公开/授权日:2012-07-31