- 专利标题: Methods of forming pluralities of capacitors
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申请号: US11083489申请日: 2005-03-18
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公开(公告)号: US20060211211A1公开(公告)日: 2006-09-21
- 发明人: Gurtej Sandhu , D. Durcan
- 申请人: Gurtej Sandhu , D. Durcan
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes within a capacitor array area over a substrate. The capacitor electrodes comprise outer lateral sidewalls. The plurality of capacitor electrodes is supported at least in part with a retaining structure which engages the outer lateral sidewalls. The retaining structure is formed at least in part by etching a layer of material which is not masked anywhere within the capacitor array area to form said retaining structure. The plurality of capacitor electrodes is incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.
公开/授权文献
- US07557015B2 Methods of forming pluralities of capacitors 公开/授权日:2009-07-07
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