发明申请
US20060214154A1 Polymeric gate dielectrics for organic thin film transistors and methods of making the same
审中-公开
用于有机薄膜晶体管的聚合物栅极电介质及其制造方法
- 专利标题： Polymeric gate dielectrics for organic thin film transistors and methods of making the same
- 专利标题（中）： 用于有机薄膜晶体管的聚合物栅极电介质及其制造方法
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申请号： US11088645申请日： 2005-03-24
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公开(公告)号： US20060214154A1公开(公告)日： 2006-09-28
- 发明人: Zhihao Yang , Diane Freeman , Amy Jasek , Shelby Nelson
- 申请人： Zhihao Yang , Diane Freeman , Amy Jasek , Shelby Nelson
- 专利权人： Eastman Kodak Company
- 当前专利权人： Eastman Kodak Company
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/84
摘要：
A thin film transistor comprises a layer of organic semiconductor material and spaced apart first and second contact means or electrodes in contact with said material. A multilayer dielectric comprises a first dielectric layer having a thickness of 200 nm to 500 nm, in contact with the gate electrode and a second dielectric layer in contact with the organic semiconductor material, and wherein the first dielectric layer comprise a continuous first polymeric material having a relatively higher dielectric constant less than 10 and the second dielectric layer comprises a continuous second non-fluorinated polymeric material having a relatively lower dielectric constant greater than 2.3. Further disclosed is a process for fabricating such a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
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