发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11198166申请日： 2005-08-08
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公开(公告)号： US20060214244A1公开(公告)日： 2006-09-28
- 发明人: Hiroshi Minakata
- 申请人： Hiroshi Minakata
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2005-092350 20050328
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/4763
摘要：
In the method for fabricating a semiconductor device, a polysilicon film is patterned to form a gate electrode 16, and a high dielectric constant insulating film 14 on a silicon substrate 10 and a device isolation film 12 on both sides of the gate electrode 16 is removed by dry etching using plasmas of a mixed gas of a base protection gas which combines with silicon to form a protection layer for protecting the silicon substrate 10 and the device isolation film 12, and an etching gas for etching the high dielectric constant insulating film 14.
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