发明申请
US20060216432A1 PLASMA TREATMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
失效
等离子体处理方法及制造半导体器件的方法
- 专利标题： PLASMA TREATMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 等离子体处理方法及制造半导体器件的方法
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申请号： US11276780申请日： 2006-03-14
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公开(公告)号： US20060216432A1公开(公告)日： 2006-09-28
- 发明人: Keiji Ohshima , Takahiro Saito , Kazunori Nagahata
- 申请人： Keiji Ohshima , Takahiro Saito , Kazunori Nagahata
- 优先权： JPP2005-081213 20050322; JPP2005-347999 20051201
- 主分类号： H05H1/00
- IPC分类号： H05H1/00
摘要：
An insulation film on a substrate is subjected to a plasma treatment using a gas containing at least either of a CH-based gas and a CO-based gas, whereby variations in the dielectric constant of the insulation film and adsorption of water onto the insulation film can be suppressed.
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