发明申请
- 专利标题： Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
- 专利标题（中）： 具有圆形纳米线晶体管沟道的半导体器件及其制造方法
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申请号： US11303408申请日： 2005-12-16
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公开(公告)号： US20060216897A1公开(公告)日： 2006-09-28
- 发明人: Sungyoung Lee , Dongsuk Shin
- 申请人： Sungyoung Lee , Dongsuk Shin
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2005-0024543 20050324
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape.
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