The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode including an n-side bonding pad and a finger-type n-electrode extending away from the n-side bonding pad. The device further includes a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order, an ohmic contact layer formed on a substantially entire upper surface of the mesa structure, and a p-electrode including a p-side bonding pad and a finger-type p-electrode extending away from the p-side bonding pad.