发明申请
- 专利标题： Reducing internal film stress in dielectric film
- 专利标题（中）： 降低电介质膜内部膜应力
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申请号： US11096678申请日： 2005-03-31
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公开(公告)号： US20060220251A1公开(公告)日： 2006-10-05
- 发明人: Grant Kloster , Boyan Boyanov , Michael Goodner , Mansour Moinpour , Michael Haverty
- 申请人： Grant Kloster , Boyan Boyanov , Michael Goodner , Mansour Moinpour , Michael Haverty
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A method of forming a film. The method comprises depositing a porous film. The porous film has active end groups; and preventing cross-linking among said active end groups, wherein the end groups are capped with less reactive or unreactive groups.
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