发明申请
US20060228479A1 Bias enhanced nucleation of diamond films in a chemical vapor deposition process
审中-公开
在化学气相沉积过程中偏置增强金刚石膜的成核
- 专利标题: Bias enhanced nucleation of diamond films in a chemical vapor deposition process
- 专利标题(中): 在化学气相沉积过程中偏置增强金刚石膜的成核
-
申请号: US11386648申请日: 2006-03-23
-
公开(公告)号: US20060228479A1公开(公告)日: 2006-10-12
- 发明人: Jeremy Dahl , Robert Carlson , Shenggao Liu , Waqar Queshi , Wasiq Bokhari
- 申请人: Jeremy Dahl , Robert Carlson , Shenggao Liu , Waqar Queshi , Wasiq Bokhari
- 申请人地址: US CA San Ramon
- 专利权人: Chevron U.S.A. Inc.
- 当前专利权人: Chevron U.S.A. Inc.
- 当前专利权人地址: US CA San Ramon
- 主分类号: C23C16/26
- IPC分类号: C23C16/26
摘要:
Diamonds are used to nucleate diamond and diamond-like carbon films in a chemical vapor deposition process using bias enhancement. A negative bias is applied to the substrate, such that a cationic form of the diamond is accelerated toward the substrate during the nucleation phase of the deposition. In this manner, the diamondoid may be embedded or partially embedded in the substrate and/or growing film, increasing the adhesion of the film to the substrate. According to the present embodiments, it is not necessary to mechanically pre-seed the substrate for nucleation purposes.
信息查询
IPC分类: