发明申请
- 专利标题： METHOD OF DOPING A GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR
- 专利标题（中）： 电场效应晶体管的栅极电极的方法
-
申请号： US10907569申请日： 2005-04-06
-
公开(公告)号： US20060228835A1公开(公告)日： 2006-10-12
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/00
摘要：
A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface ; forming an island on the top surface of the substrate, a top surface of the island parallel to the top surface of the substrate, a sidewall of the island extending between the top surface of the island and the top surface of the substrate; forming a plurality of carbon nanotubes on the sidewall of the island; and performing an ion implantation, the ion implantation penetrating into the island and blocked from penetrating into the substrate in regions of the substrate masked by the island and the carbon nanotubes.
公开/授权文献
信息查询
IPC分类:
