- 专利标题： Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently
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申请号： US11093262申请日： 2005-03-30
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公开(公告)号： US20060228871A1公开(公告)日： 2006-10-12
- 发明人: Cory Wajda , Kristen Scheer , Toshihara Furakawa
- 申请人： Cory Wajda , Kristen Scheer , Toshihara Furakawa
- 主分类号： B01J19/08
- IPC分类号： B01J19/08 ; H01L21/20
摘要：
A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.