A method of forming a semiconductor device includes forming a local strain-inducing structure of a first semiconductor material at a point location within a dielectric layer. The local strain-inducing structure has a prescribed geometry with a surface disposed above a surface of the dielectric layer. A second semiconductor material is formed over the dielectric layer and the local strain inducing structure, wherein formation of a first portion of the second material over the dielectric layer provides a poly crystalline structure of the second material and wherein formation of a second portion of the second material over the local strain-inducing structure provides a single crystalline structure of the second material subject to mechanical strain by the surface of the local strain-inducing structure. The single crystalline structure serves as a strained semiconductor layer of the semiconductor device.