发明申请
US20060228890A1 Cleaning solution and method of forming a metal pattern for a semiconductor device using the same
审中-公开
清洗液和使用其形成半导体器件的金属图案的方法
- 专利标题： Cleaning solution and method of forming a metal pattern for a semiconductor device using the same
- 专利标题（中）： 清洗液和使用其形成半导体器件的金属图案的方法
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申请号： US11402028申请日： 2006-04-12
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公开(公告)号： US20060228890A1公开(公告)日： 2006-10-12
- 发明人: Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
- 申请人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
- 优先权： KR2005-0030429 20050412
- 主分类号： C03C15/00
- IPC分类号： C03C15/00 ; H01L21/302 ; B08B6/00 ; C09K13/00
摘要：
A cleaning solution includes acetic acid, an inorganic acid, a fluoride compound, and deionized water, and may further include a corrosion inhibitor, a chelating agent, or a combination thereof. The cleaning solution may be used in the formation of a metal pattern in which a metal film including ruthenium is formed on a surface of a substrate, and a portion of the metal film is dry-etched to form a metal film pattern. After dry-etching, the metal film pattern is cleaned with the cleaning solution to remove an etching by-product layer around the metal film pattern. The cleaning solution may also be used to remove an etching by-product layer around an oxide film pattern prior to dry-etching of the metal film.
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