发明申请
- 专利标题: METHOD AND STRUCTURE FOR ION IMPLANTATION BY ION SCATTERING
- 专利标题(中): 离子散射的离子注入方法和结构
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申请号: US10907752申请日: 2005-04-14
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公开(公告)号: US20060234484A1公开(公告)日: 2006-10-19
- 发明人: Louis Lanzerotti , David Sheridan , Steven Voldman
- 申请人: Louis Lanzerotti , David Sheridan , Steven Voldman
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/22
- IPC分类号: H01L21/22 ; H01L21/38
摘要:
A scatter-implant process and device is provided where a bi-level doping pattern is achieved in a single doping step. Additionally, devices having different breakdown voltages can be produced in a single implant process. The scatter-implant is fabricated by scattering implant ions off the edge of a mask, thereby reducing the ion energy causing the ions to doping shallower regions than the non-scattered ions which dope a lower region. By adjusting various parameters of the doping process such as, for example, ion type, ion energy, mask type and geometry, in a position of scattering edge relative to other structure of the device, the scatter-implant can be tuned to achieve certain properties of the semiconductor device. Additionally, circuits can be made using the scatter-implant process where pre-selected portion of the circuit incorporate the scatter-implant region and other portions of the circuit do not rely on the scatter region.