发明申请
US20060238310A1 RFID system including a memory for correcting a fail cell and method for correcting a fail cell using the same
有权
RFID系统，包括用于校正故障单元的存储器和使用该故障单元校正故障单元的方法
- 专利标题： RFID system including a memory for correcting a fail cell and method for correcting a fail cell using the same
- 专利标题（中）： RFID系统，包括用于校正故障单元的存储器和使用该故障单元校正故障单元的方法
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申请号： US11298670申请日： 2005-12-12
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公开(公告)号： US20060238310A1公开(公告)日： 2006-10-26
- 发明人: Hee Kang , Jin Ahn
- 申请人： Hee Kang , Jin Ahn
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2005-0033318 20050421
- 主分类号： H04Q5/22
- IPC分类号： H04Q5/22
摘要：
A radio frequency identification (RFID) system and a method for correcting a failed cell using the same are provided. The RFID system effectively corrects randomly distributed cell data by using a failed cell correcting circuit in a memory. In the RFID system, a predetermined number of unit cells are separated into one memory group, and the same data are stored in each memory group at a write mode. At a read mode, the cell data of the selected memory group are compared, and the same data are identified as effective data to improve yield of the RFID system.
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