发明申请
US20060240608A1 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same
审中-公开
用于结晶硅的方法和装置，形成薄膜晶体管的方法，薄膜晶体管和使用它的显示装置
- 专利标题： Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same
- 专利标题（中）： 用于结晶硅的方法和装置，形成薄膜晶体管的方法，薄膜晶体管和使用它的显示装置
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申请号： US11472177申请日： 2006-06-21
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公开(公告)号： US20060240608A1公开(公告)日： 2006-10-26
- 发明人: Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
- 申请人： Dong-Byum Kim , Se-Jin Chung , Ui-Jin Chung
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR2004-9533 20040213
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/00
摘要：
A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.