发明申请
US20060242541A1 High reliability memory module with a fault tolerant address and command bus
有权
高可靠性存储器模块,具有容错地址和命令总线
- 专利标题: High reliability memory module with a fault tolerant address and command bus
- 专利标题(中): 高可靠性存储器模块,具有容错地址和命令总线
-
申请号: US11406719申请日: 2006-04-20
-
公开(公告)号: US20060242541A1公开(公告)日: 2006-10-26
- 发明人: Kevin Gower , Bruce Hazelzet , Mark Kellogg , David Perhnan
- 申请人: Kevin Gower , Bruce Hazelzet , Mark Kellogg , David Perhnan
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32 K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/Parity register. By providing the module with a fault tolerant address and command bus fault-tolerence and self-healing aspects necessary for autonomic computing systems compatible with industry-standards is realized. The memory module corrects single bit errors on the command or address bus and permits continuous memory operation independent of the existence of these errors and can determine any double bit error condition. The redundant contacts on the module prevents what would otherwise be single points of failure.
公开/授权文献
信息查询