发明申请
US20060243975A1 Thin film transistor substrate, method of manufacturing the same and display apparatus having the same
审中-公开
薄膜晶体管基板及其制造方法以及具有该薄膜晶体管基板的显示装置
- 专利标题: Thin film transistor substrate, method of manufacturing the same and display apparatus having the same
- 专利标题(中): 薄膜晶体管基板及其制造方法以及具有该薄膜晶体管基板的显示装置
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申请号: US11361804申请日: 2006-02-24
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公开(公告)号: US20060243975A1公开(公告)日: 2006-11-02
- 发明人: Jang-Soo Kim , Sang-Woo Whangbo , Eou-Sik Cho , Shi-Yul Kim , Hwa-Yeul Oh , Chong-Chul Chai
- 申请人: Jang-Soo Kim , Sang-Woo Whangbo , Eou-Sik Cho , Shi-Yul Kim , Hwa-Yeul Oh , Chong-Chul Chai
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2005-36821 20050502
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; G02F1/1343
摘要:
A thin film transistor substrate comprises an insulating substrate, a gate member formed on the insulating substrate, the gate member having a gate line and a first storage electrode spaced apart from the gate line, a gate insulating layer covering the gate member, an active layer formed on the gate insulating layer and overlapping the first storage electrode, and a data member formed on the active layer, the data member having a data line crossing the gate line and a second storage electrode overlapping the first storage electrode.
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