发明申请
US20060244062A1 SILICON-ON-INSULATOR BASED RADIATION DETECTION DEVICE AND METHOD
有权
基于绝缘体的绝缘体辐射检测装置及方法
- 专利标题: SILICON-ON-INSULATOR BASED RADIATION DETECTION DEVICE AND METHOD
- 专利标题(中): 基于绝缘体的绝缘体辐射检测装置及方法
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申请号: US10908117申请日: 2005-04-28
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公开(公告)号: US20060244062A1公开(公告)日: 2006-11-02
- 发明人: William Clark , Edward Nowak
- 申请人: William Clark , Edward Nowak
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/12
- IPC分类号: H01L27/12
摘要:
Structures and a method for detecting ionizing radiation using silicon-on-insulator (SOI) technology are disclosed. In one embodiment, the invention includes a substrate having a buried insulator layer formed over the substrate and an active layer formed over the buried insulator layer. Active layer may be fully depleted. A transistor is formed over the active layer, and includes a first gate conductor, a first gate dielectric and source/drain diffusion regions. The first gate conductor may include a material having a substantially (or fully) depleted doping concentration such that it has a resistivity higher than doped polysilicon such as intrinsic polysilicon. A second gate conductor is formed below the buried insulator layer and provides a second gate dielectric corresponding to the second gate conductor. A channel region between the first gate conductor and the second gate conductor is controlled by the second gate conductor (back gate) such that it acts as a radiation detector.