- 专利标题: Semiconductor apparatus
-
申请号: US11411096申请日: 2006-04-26
-
公开(公告)号: US20060244103A1公开(公告)日: 2006-11-02
- 发明人: Koji Ishikawa , Kazutaka Mori , Hiroshige Kogayu , Tamotsu Miyake , Mitsugu Kusunoki
- 申请人: Koji Ishikawa , Kazutaka Mori , Hiroshige Kogayu , Tamotsu Miyake , Mitsugu Kusunoki
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 优先权: JP2005-128855 20050427
- 主分类号: H01L27/082
- IPC分类号: H01L27/082
摘要:
A semiconductor apparatus includes a first transistor having a first emitter electrode, a first base electrode, and a first collector electrode in a region over a first region. Base lead-out polysilicon connecting the first base electrode and a first base region passes over a second region provided out of the first region and a resistor element is added. A writing voltage is reduced in an antifuse using two bipolar transistors.
公开/授权文献
- US07629669B2 Semiconductor apparatus 公开/授权日:2009-12-08