发明申请
- 专利标题: Fet amplifier, pulse modulation module, and radar device
- 专利标题(中): Fet放大器,脉冲调制模块和雷达装置
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申请号: US10558778申请日: 2005-02-23
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公开(公告)号: US20060244538A1公开(公告)日: 2006-11-02
- 发明人: Sadao Yamashita
- 申请人: Sadao Yamashita
- 优先权: JP2004-085504 20040323
- 国际申请: PCT/JP05/02852 WO 20050223
- 主分类号: H03F3/04
- IPC分类号: H03F3/04
摘要:
An FET amplifier includes an FET for amplifying a high-frequency signal to be input to the gate on the basis of a gate bias voltage from a gate bias control circuit. In the FET amplifier, a high-frequency signal input circuit and the output portion of an inverting amplifier are made conductive to the gate of the FET. A voltage stabilizing circuit generating a positive DC constant-voltage signal is made conductive to the non-inverting input portion of the inverting amplifier, and a gate bias control signal input circuit is made conductive to the inverting input portion through an inverter circuit. When the output voltage from the inverter circuit is 0 V, the inverting amplifier outputs a positive gate bias voltage (in the High state) and, when the output voltage from the inverter circuit is a fixed positive voltage, the inverting amplifier outputs a negative gate bias voltage (in the Low state) lower than the pinch-off voltage of the FET. The FET is ON/OFF controlled by the gate bias voltage and pulse modulates the input high-frequency signal to output the signal.
公开/授权文献
- US07365603B2 FET amplifier, pulse modulation module, and radar device 公开/授权日:2008-04-29
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