发明申请
- 专利标题： MULTIPLE ETCH-STOP LAYER DEPOSITION SCHEME AND MATERIALS
- 专利标题（中）： 多层退火层沉积方案和材料
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申请号： US10908142申请日： 2005-04-28
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公开(公告)号： US20060246686A1公开(公告)日： 2006-11-02
- 发明人: Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Chin-Chiu Hsia , Mong-Song Liang
- 申请人： Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Chin-Chiu Hsia , Mong-Song Liang
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/4763 ; H01L21/46
摘要：
Described are methods and structures for mitigating the effects of mechanical stresses placed on the layers of semiconductor devices, and specifically disclosed are methods and structures for mitigating the diminished chemical bonds between etch-stop layers and other semiconductor device layers. The disclosed methods and structures use different structures and/or processes for some of the etch-stop layers in a device.
公开/授权文献
- US07151052B2 Multiple etch-stop layer deposition scheme and materials 公开/授权日：2006-12-19
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