发明申请
- 专利标题： Method of manufacturing a flash memory device
- 专利标题（中）： 制造闪存装置的方法
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申请号： US11301866申请日： 2005-12-13
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公开(公告)号： US20060252204A1公开(公告)日： 2006-11-09
- 发明人: Kyoung Han , Sang Park , Sang Kim
- 申请人： Kyoung Han , Sang Park , Sang Kim
- 申请人地址： KR Kyoungki-do
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Kyoungki-do
- 优先权： KR2005-37105 20050503; KR2005-57270 20050629
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of manufacturing a flash memory device wherein a stacked structure of an oxide and nitride or the reverse is applied to insulation spacers provided on sidewalls of gates for forming source/drain regions. After completing the source/drain regions, spacers are formed on sidewalls of the gates by using an oxide film as a contacting buffer, thus minimizing the interference between gates and reducing the stress to cells, overcoming the disturbance of threshold voltage.
公开/授权文献
- US07282420B2 Method of manufacturing a flash memory device 公开/授权日：2007-10-16
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