- 专利标题： Terminal connection structure for semiconductor device
-
申请号： US11414643申请日： 2006-04-27
-
公开(公告)号： US20060255448A1公开(公告)日： 2006-11-16
- 发明人: Toshiaki Nagase , Hiroyuki Onishi , Jun Ishikawa
- 申请人： Toshiaki Nagase , Hiroyuki Onishi , Jun Ishikawa
- 优先权： JP2005-137056 20050510
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A first wiring member and a second wiring member, through which currents flow in directions opposite to each other, each have a flat plate shape and are arranged to be adjacent and opposed to each other, to thereby reduce inductances of the first wiring member and the second wiring member due to an effect of a mutual inductance. A joint of the first wiring member and a joint of the second wiring member are joined to the positive terminal and the negative terminal of the semiconductor device through ultrasonic bonding, respectively. As a result, the joint of the first wiring member and the joint of the second wiring member are not required to be provided with exclusive portions for screw mounting unlike a conventional manner, so each of the joints can have a small area, to thereby making it possible to reduce inductances of the first wiring member and the second wiring member.
公开/授权文献
- US07633166B2 Terminal connection structure for semiconductor device 公开/授权日：2009-12-15
信息查询
IPC分类:
